Design and Simulation of Low Noise Amplifier at 10 GHz By GaN High Electron Mobility Transistor

Design and Fabrication of a 9–11 GHz Balanced Low Noise Amplifier Using HJFET

This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...

MOCVD growth of GaN-based high electron mobility transistor structures

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15....

Design of a CMOS Low Noise Amplifier (LNA) at 5.8 GHz and Its Sensitivity Analysis

This paper presents a 5.8 GHz low voltage and low power LNA design integrated in a TSMC 0.18 μm CMOS process, and its sensitivity analysis. This sensitivity analysis gives a measure of the sensitivity of the LNA performance to a change in the circuit element values, thereby assisting the designer choose the adequate circuit-element tolerances. Such sensitivity analysis of the LNA is very benefi...